note1: thermal resistance from junction to lead p.c.b. mounted on 8.0x8.0 mm copper pad areas. page1 parameter symbol cefm101-g cefm102-g CEFM103-G cefm104-g cefm105-g unit max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage max. average forward current reverse recovery time max. thermal resistance (note1) max. operating junction temperature storage temperature max. dc reverse current at rated dc blocking voltage ta=25 o c ta=100 o c max. instantaneous forward voltage at 1.0a peak surge forward current 8.3ms single half sine-wave superimposed on rate load (jedec method) v rrm v dc v rms i fsm i o v f t rr i r r jl t j t stg 50 50 35 70 100 100 200 200 140 280 400 400 600 600 420 30 1.0 42 -55 to +155 -55 to +150 5.0 250 0.875 1.1 35 50 1.25 25 v v v a a v ns ua o c/w o c o c www.comchiptech.com case: mini-sma/sod-123 molded plastic terminals: solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any approx. weight: 0.04 gram mechanical data: maximum ratings and electrical characterics: ideal for surface mount applications easy pick and place plastic package has underwriters lab. flammability classification 94v-0. built-in strain relief super fast recovery time for high efficient low forward voltage drop features: reverse voltage: 50 ~ 600 volts forward current: 1.0 amp cefm101-g thru cefm105-g (rohs device) smd efficient fast recovery rectifier -g suffix designates rohs compliant version mini sma 0.161 (4.10) 0.146 (3.70) 0.012 (0.30) typ. 0.071 (1.80) 0.055 (1.40) 0.110 (2.80) 0.094 (2.40) 0.035 (0.90) typ. 0.035 (0.90) typ. 0.063 (1.60) 0.055 (1.40) dimensions in inches and (millimeter)
page2 www.comchiptech.com fig.2 - forward characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig. 6 - current derating curve fig. 5 - test circuit di agram and reverse recovery time characteristics (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. 10 noninductive 50 noninductive 0 10 20 50 40 30 1 5 10 50 1 00 10 1.0 0.1 0.01 0.001 single phase half wave 60hz 0 15 30 45 60 75 90 105 120 135 150 100 10 1.0 0.1 0. 01 tj=25 c tj=125 c tj=25 c pulse width 300us 4% duty cycle tj=25 c average forward current ( a ) ambient temperature ( c) 0 25 50 75 100 125 150 175 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 8.3ms single half sine wave jedec methode tj=75 c 0.01 0.1 1.0 10 100 fig. 3 - junction capacitance cefm101-g-103-g cefm105-g cefm104-g 35 30 25 20 15 10 5 0 f=1mhz and applied 4vdc reverse voltage tj=25 c cefm101-103 cefm104-105 rating and characteristic curves (cefm101-g thru cefm105-g) fig. 1 - reverse characteristics percent of rated peak reverse voltage (%) reverse current (ua) forward voltage (v) forward current (a) fig.4 - non repetitive forward surge curre number of cycles at 60hz peak surge forward current (a) reverse voltage (v) junction capacitance (pf) smd efficient fast recovery rectifier -g suffix designates rohs compliant version
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